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QAIPM-2011-Ph-1825: NEET 2011 Physics - Class 12 AIPM-2011-Ph-1825 Solution: Pure Si at 500 K has equal number of electron (\(n_e\)) and…

Pure Si at 500 K has equal number of electron (nen_e) and hole (nhn_h) concentrations of 1.5×1016 m−31.5 \times 10^{16}\ \text{m}^{-3}. Doping by indium increases nhn_h to 4.5×1022 m−34.5 \times 10^{22}\ \text{m}^{-3}. The doped semiconductor is of p-type having electron concentration ne=5×109 m−3n_e = 5 \times 10^9\ \text{m}^{-3} n-type with electron concentration ne=5×1022 m−3n_e = 5 \times 10^{22}\ \text{m}^{-3} p-type with electron concentration ne=2.5×1010 m−3n_e = 2.5 \times 10^{10}\ \text{m}^{-3} n-type with electron concentration ne=2.5×1023 m−3n_e = 2.5 \times 10^{23}\ \text{m}^{-3}

Multiple Choice Options

  • A 1 V
  • B 2 V
  • C 3 V
  • D 5 V

Step-by-Step Verified Solution

K.E. = h _ � h _ th = eV 0 (V 0 = cut off voltage) _ V 0 = h e ( 8.2 _ 10 14 _ 3.3 _ 10 14 ) = 6.6 _ 10 _ 34 1.6 _ 10 _ 19 ( 8.2 _ 10 14 _ 3.3 _ 10 14 ) � 2 V

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